Product DescriptionGeneral DescriptionThe GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.Features Low RDS(ON) & FOM Extremely low switching loss Excellent stability and uniformityApplications PC power LED lighting Telecom power Server power EV Charger Solar/UPSKey Performance ParametersParameterValueUnitVDS, min @ Tj(max)600VID, pulse60ARDS(ON) , max @ VGS=10V190mΩQg17.7nCAbsolute Maximum Ratings at Tj=25°C unless otherwise notedParameterSymbolValueUnitDrain-source voltageVDS550VGate-source voltageVGS±30VContinuous drain current1) , TC=25 °CID20AContinuous drain current1) , TC=100 °C12.5Pulsed drain current2) , TC=25 °CID, pulse60AContinuous diode forward current1) , TC=25 °CIS20ADiode pulsed current2) , TC=25 °CIS, pulse60APower dissipation3) , TC=25 °CPD32WSingle pulsed avalanche energy5)EAS200mJMOSFET dv/dt ruggedness, VDS=0…480 Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V, ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg , Tj-55 to 150°CThermal CharacteristicsParameterSymbolValueUnitThermal resistance, junction-caseRθJC3.9°C/WThermal resistance, junction-ambient4)RθJA62.5°C/WElectrical Characteristics at Tj=25°C unless otherwise specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown voltageBVDSS550 VVGS=0 V, ID=250 uA600 VGS=0 V, ID=250 uA, Tj=150 °CGate thresholdvoltageVGS(th)2.7 3.7VVDS=VGS , ID=250 uADrain-source on- state resistanceRDS(ON) 0.150.19ΩVGS=10 V, ID=10 A 0.37 VGS=10 V, ID=10 A,Tj=150 °CGate-sourceleakage currentIGSS 100nAVGS=30 V -100VGS=-30 VDrain-sourceleakage currentIDSS 1μAVDS=550 V, VGS=0 VGate Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 17.7 nCVGS=10 V,VDS=400 V,ID=10 AGate-source chargeQgs 4 nCGate-drain chargeQgd 7.2 nCGate plateau voltageVplateau 5.7 VBody Diode CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward voltageVSD 1.3VIS=20 A,VGS=0 VReverse recovery timetrr 237.7 nsVR=400 V,IS=10 A,di/dt=100 A/μsReverse recovery chargeQrr 2.6 μCPeak reverse recovery currentIrrm 21.1 ANote1) Calculated continuous current based on maximum allowable junction temperature.2) Repetitive rating; pulse width limited by max. junction temperature.3) Pd is based on max. junction temperature, using junction-case thermal resistance.4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.5) VDD=100 V, VGS=10 V, L=10 mH, starting Tj=25 °C.Ordering InformationPackageTypeUnits/TubeTubes /Inner BoxUnits/ Inner BoxInner Boxes/ Carton BoxUnits/ Carton BoxTO220F-C5020100066000TO220F-J5020100055000Product InformationProductPackagePb FreeRoHSHalogen FreeOSG55R190FFTO220FyesyesyesSupply ChainGreen Product Declaration/* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1
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