Enhancement Mode N-Channel Power IGBT

Product Description General DescriptionOST30N65FMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat),   low gate charge, and excellent switching performance. This device is suitable for mid to high-range switching frequency converters.Features. Advanced TGBTTM technology. Excellent conduction and switching loss. Excellent stability and uniformity. Fast and soft antiparallel diodeApplications. PV inverters. Induction converters. Uninterruptible power supplies  Key Performance Parameters  ParameterValueUnitVCES, min @ 25°C650VMaximum junction temperature175°CIC, pulse120AVCE(sat), typ @ VGE=15V1.5VQg54nCMarking Information  Product NamePackageMarkingOST30N65FMFTO220FOST30N65FMPackage & Pin Information    Absolute Maximum Ratings at Tvj=25°C unless otherwise noted  ParameterSymbolValueUnitCollector emitter voltageVCES650VGate emitter voltageVGES±20VTransient gate emitter voltage, TP≤10µs, D