Product DescriptionGeneral DescriptionOSG90R1K2xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.Features ApplicationsLow RDS(on) & FOM LightingExtremely low switching loss Hard switching PWMExcellent stability and uniformity Server power supplyEasy to drive ChargerKey Performance Parameters Absolute Maximum Ratings at Tj=25ºC unless otherwise noted ParameterSymbolValueUnitDrain source voltageVDS900VGate source voltageVGS±30VContinuous drain current1), TC=25 ºCID5AContinuous drain current1), TC=100 ºC3.2Pulsed drain current2), TC=25 ºCID, pulse15APower dissipation3) for TO251, TO262, TC=25 ºCPD83WPower dissipation3)for TO220F, TC=25 ºC31Single pulsed avalanche energy5)EAS211mJMOSFET dv/dt ruggedness, VDS=0…480 Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V, ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg,Tj-55 to 150ºC &bsp; Thermal Characteristics ParameterSymbolValueUnitTO251/TO262TO220FThermal resistance, junction-caseRθJC1.54.0ºC/WThermal resistance, junction-ambient4)RθJA6262.5ºC/WElectrical Characteristics at Tj=25 ºC unless otherwise specified ParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown voltageBVDSS900 VVGS=0 V, ID=250 μA9601070 VGS=0 V, ID=250 μA,Tj=150 ºCGate threshold voltageVGS(th)2.0 4.0VVDS=VGS, ID=250 μADrain-source on-state resistanceRDS(ON) 1.01.2ΩVGS=10 V, ID=2 A 2.88 VGS=10 V, ID=2 A,Tj=150 ºCGate-source leakage currentIGSS 100nAVGS=30 V -100VGS=-30 VDrain-source leakage currentIDSS 10μAVDS=900 V, VGS=0 VDynamic Characteristics ParameterSymbolMin.Typ.Max.UnitTest conditionInput capacitanceCiss 874.2 pFVGS=0 V, VDS=50 V,f=100kHzOutput capacitanceCoss 37.5 pFReverse transfer capacitanceCrss 1.7 pFTurn-on delay timetd(on) 33.23 nsVGS=10 V, VDS=400 V, RG=33 Ω, ID=5 ARise timetr 26.50 nsTurn-off delay timetd(off) 44.00 nsFall timetf 17.63 ns Gate Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 12.50 nCID=5 A, VDS=400 V, VGS=10 VGate-source chargeQgs 3.75 nCGate-drain chargeQgd 4.28 nCGate plateau voltageVplateau 5.8 VBody Diode Characteristics ParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward currentIS 5AVGS
Related products about Aux Flyback Converter One Switch Topologies Mosfet
-
Waste Tyre Plastic Recycling Machinery Machine Tire Crusher Production Line Rubber Crumb Grinding Machine Equipment Tire Shredder
-
Stretch Plastic Blowing Pet Bottle Making Blow Molding Machine Bottles Stretch Automatic Pet Bottle Blowing Machine
-
Waste Plastic Pet Bottle, Water Bottle Flake, PP/HDPE/LDPE PE Film Jumbo Woven Bags Plastic Crusher Machine, Plastic Crushing Washing Recycling Machine
-
Type 2 Wall-Mounted Electric Car Charging Station 7kw /11 Kwelectric Vehicle Charging Station Home Wallbox AC EV Charger Single Phase or 3three Phase
-
G-View G12W Wholesale Auto Car LED Headlight Bulb High Power H13 H11 9005 H7 H4 Car LED Headlights LED Car Lights
-
New Design Porcelain Round Plates Dinner Set for Wedding and Banquet
-
China 2023 New Design Super Soft 100% Polyester Microfiber Knitted Oversized Decoration Hoodie Blanket
-
Handmade Art Creative Materials Thickened White Paper Cup DIY Disposable Handmade Colored Paper Cup