N-Channel 800W 900V Power Mosfet To252 Package Osg80r900df

Product DescriptionGeneral DescriptionThe GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.The  GreenMOS®   Generic  series  is  optimized  for  extreme  switching  performance  to  minimize switching  loss.  It  is  tailored for  high  power  density applications  to  meet the  highest  efficiency standards.Features. Low RDS(ON) & FOM. Extremely low switching loss. Excellent stability and uniformityApplications. PC power. LED lighting. Telecom power.  Server power. EV Charger.  Solar/UPSKey Performance Parameters ParameterValueUnitVDS, min @ Tj(max)850VID, pulse15ARDS(ON) , max @ VGS=10V900mΩQg11.7nCMarking Information  Product NamePackageMarkingOSG80R900DFTO252OSG80R900D Absolute Maximum Ratings at Tj=25°C unless otherwise noted  ParameterSymbolValueUnitDrain-source voltageVDS800VGate-source voltageVGS±30VContinuous drain current1) , TC=25 °CID5AContinuous drain current1) , TC=100 °C3.2Pulsed drain current2) , TC=25 °CID, pulse15AContinuous diode forward current1) , TC=25 °CIS5ADiode pulsed current2) , TC=25 °CIS, pulse15APower dissipation3) , TC=25 °CPD63WSingle pulsed avalanche energy5)EAS160mJMOSFET dv/dt ruggedness, VDS=0…640 Vdv/dt50V/nsReverse diode dv/dt, VDS=0…640 V, ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg, Tj-55 to 150°CThermal Characteristics  ParameterSymbolValueUnitThermal resistance, junction-caseRθJC2°C/WThermal resistance, junction-ambient4)RθJA62°C/WElectrical Characteristics at Tj=25°C unless otherwise specified  ParameterSymbolMin.Typ.Max.UnitTest conditionDrain-sourcebreakdown voltageBVDSS800  VVGS=0 V, ID=250 μA850  VGS=0 V, ID=250 μA, Tj=150 °CGate thresholdvoltageVGS(th)2.9 3.9VVDS=VGS , ID=250 μADrain-source on- state resistanceRDS(ON) 0.80.9ΩVGS=10 V, ID=2.5 A 2.1 VGS=10 V, ID=2.5 A, Tj=150 °CGate-sourceleakage currentIGSS  100nAVGS=30 V  - 100VGS=-30 VDrain-sourceleakage currentIDSS  1μAVDS=800 V, VGS=0 VDynamic Characteristics  ParameterSymbolMin.Typ.Max.UnitTest conditionInput capacitanceCiss 647.4 pFVGS=0 V,VDS=50 V,ƒ=100 kHzOutput capacitanceCoss 36.1 pFReverse transfer capacitanceCrss 1.5 pFTurn-on delay timetd(on) 31.3 nsVGS=10 V,VDS=400 V,RG=2 Ω,ID=4 ARise timetr 16.4 nsTurn-off delay timetd(off) 54.6 nsFall timetf 7.0 nsGate Charge Characteristics  ParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 11.7 nCVGS=10 V,VDS=400 V,ID=4 AGate-source chargeQgs 2.8 nCGate-drain chargeQgd 4.4 nCGate plateau voltageVplateau 5.8 VBody Diode Characteristics  ParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward voltageVSD  1.3VIS=5 A,VGS=0 VReverse recovery timetrr 216.5 nsVR =400 V,IS=4 A,di/dt=100 A/μsReverse recovery chargeQrr 1.9 μCPeak reverse recovery currentIrrm 17.0 ANote1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.3)    Pd is based on max. junction temperature, using junction-case thermal resistance.4)    The value of RθJA  is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.5)    VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.Supply ChainGreen Product Declaration     /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1