Silicon Carbide Schottky Diode 20A/1200V SIC SC20120PT With TO-247AB Package

  Product DescriptionSILICON CARBIDE SCHOTTKY DIODEElectronics ComponentPart Number:  SC20120PTMajor Parameter: TypeVRRMIFIR(25ºC)IR(175ºC)VF(25ºC)VF(175ºC)TjOutlineVAμAμAVVºCSC20120PT12002×105501.8 2.5175TO-247ABSC30120PT12002×155501.8 2.5175SC40120PT12002×205501.8 2.5175Brand: JF logoPackage:  TO-247ABManufacturer: Jinan Jingheng Electronics Co., Ltd.Description:SIC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over voltage conditions.Features:· Max Junction Temperature 175°C· High Surge Current Capacity· Positive Temperature Coefficient· Ease of Paralleling· No Reverse Recovery· No Forward RecoveryApplication: · General Purpose· SMPS, Solar inverter, UPS· Power Switching CircuitsCompany Profile  /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1