Switching Mode Power Supply Sfs04r011ugnf Pdfn5X6 Mosfet

General DescriptionFSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially designed to use in motor control systems with driving voltage of more than 10V.FeaturesLow RDS(on) & FOM (Figure of Merit)Extremely low switching lossExcellent reliability and uniformityFast switching and soft recoveryAEC-Q101QualifiedforAutomotiveApplicationsApplicationsPD chargerMotor driverSwitching voltage regulatorDC-DC convertorSwitching mode power supplyKey Performance Parameters   ParameterValueUnitVDS40VID, pulse800ARDS(ON), max @ VGS=10V1.1mΩQg75.9nCMarking Information   Product NamePackageMarkingSFS04R011UGNFPDFN5×6SFS04R011UGN  Absolute Maximum Ratings at Tj=25°C unless otherwise noted   ParameterSymbolValueUnitDrain-sourcevoltageVDS40VGate-sourcevoltageVGS±20VContinuous drain current1), TC=25 °CID200APulsed drain current2), TC=25 °CID, pulse800AContinuous diode forward current1), TC=25 °CIS200ADiode pulsed current2), TC=25 °CIS, pulse800APower dissipation3), TC=25 °CPD202WSingle pulsed avalanche energy5)EAS240mJOperation and storage temperatureTstg, Tj-55 to 175°CThermal Characteristics   ParameterSymbolValueUnitThermalresistance,junction-caseRθJC0.74°C/WThermalresistance,junction-ambient4)RθJA62°C/WElectrical Characteristics at Tj=25°C unless otherwise specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown voltageBVDSS40  VVGS=0 V, ID=250 μAGate threshold voltageVGS(th)2.0 4.0VVDS=VGS, ID=250 μADrain-source on- state resistanceRDS(ON) 1.01.1mΩVGS=10 V, ID=20 AGate-source leakage currentIGSS  100nAVGS=20 V  -100VGS=-20 VDrain-source leakage currentIDSS  1μAVDS=40 V, VGS=0 VGate resistanceRG 3.2 Ωƒ=1 MHz, Open drainDynamic CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionInput capacitanceCiss 5453 pFVGS=0 V, VDS=25 V,ƒ=100 kHzOutput capacitanceCoss 1951 pFReverse transfer capacitanceCrss 113 pFTurn-on delay timetd(on) 17.5 nsVGS=10 V, VDS=40 V, RG=2 Ω, ID=40 ARise timetr 25.2 nsTurn-off delay timetd(off) 48.2 nsFall timetf 25.7 nsGate Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 75.9 nCVGS=10 V, VDS=40 V, ID=40 AGate-sourcechargeQgs 25 nCGate-drainchargeQgd 15.3 nCGate plateau voltageVplateau 4.9 VBody Diode CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward voltageVSD  1.3VIS=20 A, VGS=0 VReverse recovery timetrr 61.4 nsVR=40 V, IS=40 A,di/dt=100 A/μsReverse recovery chargeQrr 86 nCPeak reverse recovery currentIrrm 2.7 ANoteCalculated continuous current based on maximum allowable junction temperature.Repetitive rating; pulse width limited by max. junction temperature.Pd is based on max. junction temperature, using junction-case thermal resistance.The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.             /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1