Aec-Q101 Qualified Automotive Applications Mosfet

  Product DescriptionGeneral DescriptionFSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.FeaturesLow RDS(ON) & FOMExtremely low switching lossExcellent reliability and uniformityFast switching and soft recoveryAEC-Q101QualifiedforAutomotiveApplicationsApplicationsPD chargerMotor driverSwitching voltage regulatorDC-DC convertorSwitching mode power supplyKey Performance Parameters   ParameterValueUnitVDS40VID, pulse255ARDS(ON), max @ VGS=10V3.8mΩQg36.6nCMarking Information   Product NamePackageMarkingSFS04R038GFPDFN5 x6SFS04R038G     Absolute Maximum Ratings at Tj=25°C unless otherwise noted   ParameterSymbolValueUnitDrain-sourcevoltageVDS40VGate-sourcevoltageVGS±20VContinuous drain current1), TC=25 °CID85APulsed drain current2), TC=25 °CID, pulse255AContinuous diode forward current1), TC=25 °CIS85ADiode pulsed current2), TC=25 °CIS, pulse255APower dissipation3), TC=25 °CPD78WSingle pulsed avalanche energy5)EAS43mJOperation and storage temperatureTstg, Tj-55 to 175°CThermal Characteristics   ParameterSymbolValueUnitThermalresistance,junction-caseRθJC1.92°C/WThermalresistance,junction-ambient4)RθJA62°C/WElectrical Characteristics at Tj=25°C unless otherwise specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown voltageBVDSS40  VVGS=0 V, ID=250 μAGate threshold voltageVGS(th)1.5 2.5VVDS=VGS, ID=250 μADrain-sourceon-state resistanceRDS(ON) 3.53.8mΩVGS=10 V, ID=30 ADrain-sourceon-state resistanceRDS(ON) 5.47.0mΩVGS=4.5 V, ID=30 AGate-source leakage currentIGSS  100nAVGS=20 V  -100VGS=-20 VDrain-source leakage currentIDSS  1μAVDS=40 V, VGS=0 VGate resistanceRG 4 Ωƒ=1 MHz, Open drainDynamic CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionInput capacitanceCiss 2378 pFVGS=0 V, VDS=25 V,ƒ=100 kHzOutput capacitanceCoss 798 pFReverse transfer capacitanceCrss 64 pFTurn-on delay timetd(on) 23 nsVGS=10 V, VDS=20 V, RG=2 Ω, ID=20 ARise timetr 6.4 nsTurn-off delay timetd(off) 51.2 nsFall timetf 9.6 nsGate Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 36.6 nCVGS=10 V, VDS=20 V, ID=20 AGate-sourcechargeQgs 7.6 nCGate-drainchargeQgd 5.7 nCGate plateau voltageVplateau 3.3 VBody Diode CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward voltageVSD  1.3VIS=20 A, VGS=0 VReverse recovery timetrr 51.2 nsVR=20 V, IS=20 A,di/dt=100 A/μsReverse recovery chargeQrr 31.8 nCPeak reverse recovery currentIrrm 1.2 ANoteCalculated continuous current based on maximum allowable junction temperature.Repetitive rating; pulse width limited by max. junction temperature.Pd is based on max. junction temperature, using junction-case thermal resistance.The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.             /* January 22, 2024 19:08:37 */!function(){function s(e,r){var a,o={};try{e&&e.split(",").forEach(function(e,t){e&&(a=e.match(/(.*?):(.*)$/))&&1